Discrete Semiconductor Products
FDMS037N08B
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 75V, 100A, 3.7MΩ
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Discrete Semiconductor Products
FDMS037N08B
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 75V, 100A, 3.7MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS037N08B |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 100 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 5915 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 830 mW, 104.2 W |
| Rds On (Max) @ Id, Vgs [Max] | 3.7 mOhm |
| Supplier Device Package | 8-PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.41 | |
| 10 | $ 2.23 | |||
| 100 | $ 1.55 | |||
| 500 | $ 1.26 | |||
| 1000 | $ 1.17 | |||
| Digi-Reel® | 1 | $ 3.41 | ||
| 10 | $ 2.23 | |||
| 100 | $ 1.55 | |||
| 500 | $ 1.26 | |||
| 1000 | $ 1.17 | |||
| Tape & Reel (TR) | 3000 | $ 1.13 | ||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 1.43 | |
| 6000 | $ 1.36 | |||
| 12000 | $ 1.22 | |||
| 18000 | $ 1.18 | |||
| 30000 | $ 1.13 | |||
| ON Semiconductor | N/A | 1 | $ 1.04 | |
Description
General part information
FDMS037N08B Series
This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Documents
Technical documentation and resources