Discrete Semiconductor Products

SI3850ADV-T1-GE3

Obsolete

MOSFET N/P-CH 20V 1.4A 6-TSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 20V 1.4A 6-TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3850ADV-T1-GE3

Configuration	Common Drain, N and P-Channel
Current - Continuous Drain (Id) @ 25°C	960 mA, 1.4 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	1.08 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Power - Max [Max]
Vishay General Semiconductor - Diodes Division SI3850ADV-T1-GE3	-55 °C	150 °C	6-TSOP	MOSFET (Metal Oxide)	20 V	300 mOhm	Surface Mount	Logic Level Gate	1.4 nC	Common Drain N and P-Channel	1.4 A 960 mA	1.5 V	SOT-23-6 Thin TSOT-23-6	1.08 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 1.4A, 960mA 1.08W Surface Mount 6-TSOP

Technical documentation and resources

No documents available