Discrete Semiconductor Products

MBR60035CTR

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DIODE MOD SCHOTT 35V 300A 2TOWER

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Discrete Semiconductor Products

Active

DIODE MOD SCHOTT 35V 300A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR60035CTR

Current - Average Rectified (Io) (per Diode)	300 A
Current - Reverse Leakage @ Vr	1 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	500 ns, 200 mA
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	35 V
Voltage - Forward (Vf) (Max) @ If [Max]	750 mV

Part	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]
GeneSiC Semiconductor MBR60035CT	300 A	1 Pair Common Cathode	Schottky	1 mA	Chassis Mount	750 mV	Twin Tower	200 mA 500 ns	-55 °C	150 °C	Twin Tower	35 V
GeneSiC Semiconductor MBR60035CTR	300 A	1 Pair Common Anode	Schottky	1 mA	Chassis Mount	750 mV	Twin Tower	200 mA 500 ns	-55 °C	150 °C	Twin Tower	35 V
GeneSiC Semiconductor MBR60035CTL	300 A	1 Pair Common Cathode	Schottky	3 mA	Chassis Mount	600 mV	Twin Tower	200 mA 500 ns	-55 °C	150 °C	Twin Tower	35 V
GeneSiC Semiconductor MBR60035CTRL	300 A	1 Pair Common Anode	Schottky	3 mA	Chassis Mount	600 mV	Twin Tower	200 mA 500 ns	-55 °C	150 °C	Twin Tower	35 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Anode 35 V 300A Chassis Mount Twin Tower

Technical documentation and resources