FPF2C8P2NL07A

Obsolete

INSULATED GATE BIPOLAR TRANSISTO

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

INSULATED GATE BIPOLAR TRANSISTO

Technical Specifications

Parameters and characteristics for this part

Specification	FPF2C8P2NL07A

Configuration	Three Phase
Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Cutoff (Max) [Max]	250 µA
IGBT Type	Field Stop
Input	Standard
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	F2 Module
Power - Max [Max]	135 W
Supplier Device Package	F2
Vce(on) (Max) @ Vge, Ic	2.2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Input	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Package / Case	Power - Max [Max]	NTC Thermistor	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Configuration	Current - Collector Cutoff (Max) [Max]
ON Semiconductor FPF2C8P2NL07A	Standard	650 V	2.2 V	Chassis Mount	150 °C	-40 °C	Field Stop	F2 Module	135 W		F2	30 A	Three Phase	250 µA
ON Semiconductor FPF2C8P2NL07A	Standard	650 V	2.2 V	Chassis Mount	150 °C	-40 °C	Field Stop	F2 Module	135 W		F2	30 A	Three Phase	250 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Module Field Stop Three Phase 650 V 30 A 135 W Chassis Mount F2

Technical documentation and resources

No documents available