Discrete Semiconductor Products

PJA3406_R1_00001

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1.25W/30V/4.4A/MOSFET/SOT-23/SINGLE N-CH

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Discrete Semiconductor Products

Active

1.25W/30V/4.4A/MOSFET/SOT-23/SINGLE N-CH

Technical Specifications

Parameters and characteristics for this part

Specification	PJA3406_R1_00001

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.8 nC
Input Capacitance (Ciss) (Max) @ Vds	235 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	48 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Panjit International Inc. PJA3406_R1_00001	4.5 V 10 V	4.4 A	SOT-23	MOSFET (Metal Oxide)	Surface Mount	SC-59 SOT-23-3 TO-236-3	48 mOhm	5.8 nC	N-Channel	20 V	-55 °C	150 °C	1.25 W	2.1 V	30 V	235 pF

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General part information

N-Channel 30 V 4.4A (Ta) 1.25W (Ta) Surface Mount SOT-23

Technical documentation and resources