Discrete Semiconductor Products

SQ2364EES-T1_GE3

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MOSFET N-CH 60V 2A SOT23-3

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Discrete Semiconductor Products

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MOSFET N-CH 60V 2A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SQ2364EES-T1_GE3

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [custom]	4.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	2.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	330 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Grade	Gate Charge (Qg) (Max) @ Vgs [custom]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Qualification	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SQ2364EES-T1_GE3	8 V	SC-59 SOT-23-3 TO-236-3	-55 °C	175 ░C	1.5 V 4.5 V	3 W	60 V	1 V	Surface Mount	240 mOhm	330 pF	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	Automotive	4.5 V	2.5 nC	N-Channel	AEC-Q101	2 A

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General part information

N-Channel 60 V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources