Discrete Semiconductor Products

FS50UM-3

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MOSFET N-CH 150V 50A

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Discrete Semiconductor Products

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MOSFET N-CH 150V 50A

Technical Specifications

Parameters and characteristics for this part

Specification	FS50UM-3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6540 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	31 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Technology	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation FS50UMJ-3
Renesas Electronics Corporation FS50UM-3	TO-220-3	50 A	20 V	150 V	150 °C	Through Hole	6540 pF	10 V	N-Channel	TO-220-3	MOSFET (Metal Oxide)	31 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	63	$ 4.80

General part information

N-Channel 150 V 50A Through Hole TO-220-3

Technical documentation and resources

No documents available