Discrete Semiconductor Products

RZF020P01TL

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Rohm Semiconductor

TRANS MOSFET P-CH 12V 2A 3-PIN TUMT T/R

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Search across all available documentation for this part.

DocumentsTUMT3 Part Marking TUMT3 TL Taping Spec +38

Discrete Semiconductor Products

RZF020P01TL

Active

Rohm Semiconductor

TRANS MOSFET P-CH 12V 2A 3-PIN TUMT T/R

Deep-Dive with AI

DocumentsTUMT3 Part Marking TUMT3 TL Taping Spec +38

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RZF020P01TL

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.5 nC
Input Capacitance (Ciss) (Max) @ Vds	770 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	TUMT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

RZF020 Series

1.5V Drive Pch MOSFET

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature
Rohm Semiconductor RZF020P01TL	Surface Mount	2 A	P-Channel	TUMT3	1 V	10 V	6.5 nC	MOSFET (Metal Oxide)	770 pF	1.5 V 4.5 V	12 V	105 mOhm	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.39
		10	$ 0.33
		100	$ 0.23
		500	$ 0.18
		1000	$ 0.15
	Digi-Reel®	1	$ 0.39
		10	$ 0.33
		100	$ 0.23
		500	$ 0.18
		1000	$ 0.15
	N/A	5392	$ 0.83
	Tape & Reel (TR)	3000	$ 0.15
Newark	Each (Supplied on Cut Tape)	1	$ 0.74
		10	$ 0.47
		25	$ 0.41
		50	$ 0.36
		100	$ 0.31
		300	$ 0.27
		500	$ 0.23
		1000	$ 0.21

Description

General part information

RZF020 Series

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.