Discrete Semiconductor Products

SI1443EDH-T1-BE3

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MOSFET P-CH 30V 4A/4A SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 30V 4A/4A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1443EDH-T1-BE3

Current - Continuous Drain (Id) @ 25°C	4 A, 4 A
Drain to Source Voltage (Vdss)	30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	1.6 W, 2.8 W
Rds On (Max) @ Id, Vgs [Max]	54 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI1443EDH-T1-BE3	1.6 W 2.8 W	1.5 V	6-TSSOP SC-88 SOT-363	-55 °C	150 °C	P-Channel	28 nC	Surface Mount	4 A 4 A	SC-70-6	30 V	MOSFET (Metal Oxide)	54 mOhm	12 V

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General part information

P-Channel 30 V 4A (Ta), 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6

Technical documentation and resources