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TK200F04N1L,LXGQ
Discrete Semiconductor Products

TK33S10N1Z,LXHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 33A DPAK

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TK200F04N1L,LXGQ
Discrete Semiconductor Products

TK33S10N1Z,LXHQ

Active
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 33A DPAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTK33S10N1Z,LXHQ
Current - Continuous Drain (Id) @ 25°C33 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]2050 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)125 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs9.7 mOhm
Supplier Device PackageDPAK+
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.92
10$ 1.22
100$ 0.83
500$ 0.66
1000$ 0.60
Digi-Reel® 1$ 1.92
10$ 1.22
100$ 0.83
500$ 0.66
1000$ 0.60
N/A 3704$ 1.64
Tape & Reel (TR) 2000$ 0.55
4000$ 0.52
6000$ 0.51

Description

General part information

TK33S10 Series

12V - 300V MOSFETs, N-ch MOSFET, 100 V, 33 A, 0.0097 Ω@10V, DPAK+

Documents

Technical documentation and resources