Discrete Semiconductor Products

SI7892BDP-T1-GE3

Active

MOSFET N-CH 30V 15A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 30V 15A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7892BDP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	3775 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs [Max]	4.2 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI7892BDP-T1-GE3	15 A	20 V	4.5 V 10 V	30 V	-55 °C	150 °C	1.8 W	Surface Mount	3 V	4.2 mOhm	3775 pF	PowerPAK® SO-8	MOSFET (Metal Oxide)	N-Channel	PowerPAK® SO-8	40 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 15A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources