PSMN6R7-40MSDX

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MOSFET N-CH 40V 50A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 40V 50A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN6R7-40MSDX

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1642 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs [Max]	6.7 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C
Freescale Semiconductor - NXP PSMN6R7-40MSDX	10 V	LFPAK33	Surface Mount	65 W	22 nC	-55 °C	175 ░C	MOSFET (Metal Oxide)	1642 pF	20 V	3.6 V	40 V	6.7 mOhm	N-Channel	50 A

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General part information

N-Channel 40 V 50A (Tc) 65W (Tc) Surface Mount LFPAK33

Technical documentation and resources