Discrete Semiconductor Products

BAV200-GS08

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DIODE GP 50V 250MA SOD80

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Discrete Semiconductor Products

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DIODE GP 50V 250MA SOD80

Technical Specifications

Parameters and characteristics for this part

Specification	BAV200-GS08

Capacitance @ Vr, F	1.5 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	100 nA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Qualification	AEC-Q101
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-80 QuadroMELF
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Mounting Type	Supplier Device Package	Grade	Operating Temperature - Junction	Speed	Technology	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Qualification	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division BAV200-GS08	Surface Mount	SOD-80 QuadroMELF	Automotive	150 °C	200 mA 500 ns	Standard	100 nA	50 ns	1 V	AEC-Q101	50 V	1.5 pF	250 mA

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General part information

Diode 50 V 250mA Surface Mount SOD-80 QuadroMELF

Technical documentation and resources