Discrete Semiconductor Products

SI7288DP-T1-GE3

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MOSFET 2N-CH 40V 20A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 20A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7288DP-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	565 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	15.6 W
Rds On (Max) @ Id, Vgs [Max]	19 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.8 V

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI7288DP-T1-GE3	MOSFET (Metal Oxide)	-55 °C	150 °C	2.8 V	Surface Mount	PowerPAK® SO-8 Dual	19 mOhm	2 N-Channel (Dual)	20 A	565 pF	15.6 W	40 V	PowerPAK® SO-8 Dual	15 nC

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General part information

Mosfet Array 40V 20A 15.6W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources