Specification	NTNS2K1P021ZTCG

Current - Continuous Drain (Id) @ 25°C	127 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	12800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max) [Max]	125 mW
Rds On (Max) @ Id, Vgs [Max]	5 Ohm
Supplier Device Package	0.42x0.62, 3-XDFN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

NTNS2K1P021Z Series

MOSFET, N-Channel FET, 20V, 1.5 Ω, XDFN3

Part	Technology	FET Type	Power Dissipation (Max) [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)
ON Semiconductor NTNS2K1P021ZTCG	MOSFET (Metal Oxide)	P-Channel	125 mW	8 V	12800 pF	127 mA	Surface Mount	-55 °C	150 °C	5 Ohm	1 V	3-XFDFN	1.5 V 4.5 V	0.42x0.62 3-XDFN	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel MOSFET, 20V, 1.5 Ω, XDFN3 0.42x0.62x0.4mm

Technical documentation and resources