Specification	NTMFS2D1N08XT1G

Current - Continuous Drain (Id) @ 25°C	201 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	4470 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	164 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

NTMFS2D1N08X Series

MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mΩ, 201 A

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Supplier Device Package	Power Dissipation (Max)	FET Type	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTMFS2D1N08XT1G	201 A	-55 °C	175 ░C	5-DFN (5x6)	8-SOFL	164 W	N-Channel	MOSFET (Metal Oxide)	8-PowerTDFN 5 Leads	63 nC	20 V	80 V	Surface Mount	1.9 mOhm	3.6 V	4470 pF	6 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mΩ, 201 A

Technical documentation and resources