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TO-252-3
Discrete Semiconductor Products

IXTY44N10T

Active
Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 100 V, 44 A, 0.03 OHM, TO-252 (DPAK), SURFACE MOUNT

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TO-252-3
Discrete Semiconductor Products

IXTY44N10T

Active
Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 100 V, 44 A, 0.03 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTY44N10T
Current - Continuous Drain (Id) @ 25°C44 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1262 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)130 W
Rds On (Max) @ Id, Vgs30 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.48
70$ 2.00
140$ 1.64
560$ 1.39
1050$ 1.18
2030$ 1.12
5040$ 1.08
NewarkEach 1$ 2.70
25$ 2.00
100$ 1.29
250$ 1.26
500$ 1.22
1000$ 1.17
2500$ 1.02

Description

General part information

IXTY44N10T Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density

Documents

Technical documentation and resources