Discrete Semiconductor Products

PBLS4004D,115

LTB

TRANS PREBIAS 1NPN 1PNP 6TSOP

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Discrete Semiconductor Products

LTB

TRANS PREBIAS 1NPN 1PNP 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PBLS4004D,115

Current - Collector (Ic) (Max)	700 mA, 100 mA
Current - Collector Cutoff (Max)	100 nA
Current - Collector Cutoff (Max)	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Max]	300
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Power - Max [Max]	600 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
Supplier Device Package	6-TSOP
Transistor Type	1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic	310 mV, 150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V
Voltage - Collector Emitter Breakdown (Max) [Min]	40 V

Part	Resistor - Base (R1)	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce [Max]	Transistor Type	Mounting Type	Power - Max [Max]	Frequency - Transition	Current - Collector Cutoff (Max)	Current - Collector Cutoff (Max)	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max)	Supplier Device Package
Freescale Semiconductor - NXP PBLS4004D,115	22 kOhms	SC-74 SOT-457	50 V	40 V	60	300	1 NPN Pre-Biased 1 PNP	Surface Mount	600 mW	150 MHz	100 nA	1 µA	150 mV 310 mV	22 kOhms	100 mA 700 mA	6-TSOP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA, 700mA 150MHz 600mW Surface Mount 6-TSOP

Technical documentation and resources