Specification	ECH8661-TL-H

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	7 A, 5.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	11.8 nC
Input Capacitance (Ciss) (Max) @ Vds	710 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	8-ECH
Technology	MOSFET (Metal Oxide)

ECH8661 Series

Complementary Dual Power MOSFET 30V

Part	FET Feature	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Operating Temperature	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Configuration	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
ON Semiconductor ECH8661-TL-H	Logic Level Gate	5.5 A 7 A	24 mOhm	MOSFET (Metal Oxide)	8-ECH	150 °C	1.5 W	11.8 nC	N and P-Channel	30 V	710 pF	Surface Mount
ON Semiconductor ECH8661-TL-HX

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

ECH8661 is a Power MOSFET, 30V, 7A, 24mΩ, -30V, -5.5A, 39mΩ, Complementary Dual ECH8 for general purpose switching device applications.