Specification	FDMS7658AS

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	109 nC
Input Capacitance (Ciss) (Max) @ Vds	7350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 89 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMS7658AS Series

N-Channel PowerTrench® SyncFET™ 30V, 176A, 1.9mΩ

Part	Package / Case	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDMS7658AS	8-PowerTDFN	MOSFET (Metal Oxide)	30 V	3 V	20 V	109 nC	2.5 W 89 W	8-PQFN (5x6)	N-Channel	1.9 mOhm	Surface Mount	7350 pF	-55 °C	150 °C	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMS7658AS Series

The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.