Discrete Semiconductor Products

PMPB24EPX

Obsolete

MOSFET P-CH 30V 6.4A DFN2020MD-6

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 6.4A DFN2020MD-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB24EPX

Current - Continuous Drain (Id) @ 25°C	6.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1069 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.8 W, 15.6 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP PMPB24EPX	Surface Mount	P-Channel	6.4 A	20 V	1.8 W 15.6 W	4.5 V 10 V	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	28 mOhm	1069 pF	28 nC	6-UDFN Exposed Pad	DFN2020MD-6	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 6.4A (Ta) 1.8W (Ta), 15.6W (Tc) Surface Mount DFN2020MD-6

Technical documentation and resources