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Technical Specifications
Parameters and characteristics for this part
| Specification | R8010ANX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1750 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) @ Id, Vgs | 560 mOhm |
| Supplier Device Package | TO-220FM |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.78 | |
Description
General part information
R8010 Series
N-Channel 800 V 10A (Tc) 40W (Tc) Through Hole TO-220FM
Documents
Technical documentation and resources