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R6004KNXC7G
Discrete Semiconductor Products

R8010ANX

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Rohm Semiconductor

MOSFET N-CH 800V 10A TO220FM

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R6004KNXC7G
Discrete Semiconductor Products

R8010ANX

Active
Rohm Semiconductor

MOSFET N-CH 800V 10A TO220FM

Technical Specifications

Parameters and characteristics for this part

SpecificationR8010ANX
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs62 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1750 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)40 W
Rds On (Max) @ Id, Vgs560 mOhm
Supplier Device PackageTO-220FM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.78

Description

General part information

R8010 Series

N-Channel 800 V 10A (Tc) 40W (Tc) Through Hole TO-220FM