Discrete Semiconductor Products

1N1200A

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DIODE GEN PURP 100V 12A DO4

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Discrete Semiconductor Products

Active

DIODE GEN PURP 100V 12A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N1200A

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AA, Stud, DO-4
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

Part	Speed [Min]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor 1N1200A	200 mA 500 ns	10 µA	200 C	-65 C	Standard	12 A	100 V	Chassis Stud Mount	DO-203AA DO-4 Stud	DO-4	1.1 V

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General part information

Diode 100 V 12A Chassis, Stud Mount DO-4

Technical documentation and resources