Discrete Semiconductor Products

PHP55N03LTA,127

Obsolete

MOSFET N-CH 25V 55A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 55A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PHP55N03LTA,127

Current - Continuous Drain (Id) (Tc)	55 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	950 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	85 W
Rds On (Max)	14 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

Part	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Mounting Type	Rds On (Max)	Package Name	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Vgs (Max)	Gate Charge (Max)	Technology	Package / Case	Current - Continuous Drain (Id) (Tc)
NXP USA Inc. PHP55N03LTA,127	950 pF	85 W	Through Hole	14 mOhm	TO-220AB	2 V	-55 °C	175 °C	25 V	10 V	5 V	N-Channel	20 V	20 nC	MOSFET (Metal Oxide)	TO-220-3	55 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 25 V 55A (Tc) 85W (Tc) Through Hole TO-220AB

Technical documentation and resources