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GD25D80EEIGR
Integrated Circuits (ICs)

GD25D80EEIGR

Active
GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/DUAL 8USON

GD25D80EEIGR
Integrated Circuits (ICs)

GD25D80EEIGR

Active
GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/DUAL 8USON

Technical Specifications

Parameters and characteristics for this part

SpecificationGD25D80EEIGR
Access Time6 ns
Clock Frequency104 MHz
Memory Depth1 M
Memory FormatFLASH
Memory Interface (Type)SPI - Dual I/O
Memory Size1 MB
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case8-XFDFN Exposed Pad
Package Length3 mm
Package Name8-USON
Package Width2 mm
TechnologyFLASH - NOR (SLC)
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.7 V
Write Cycle Time - Page4 ms
Write Cycle Time - Word50 µs

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Reel (TR) 12000$ 0.29<6d

CAD

3D models and CAD resources for this part

Description

General part information

GD25D80 Series

FLASH - NOR (SLC) Memory IC 8Mbit SPI - Dual I/O 104 MHz 6 ns 8-USON (3x2)

Documents

Technical documentation and resources

No documents available