Discrete Semiconductor Products

RJK6002DPD-00#J2

LTB

NCH SINGLE POWER MOSFET 600V 2A 6800MOHM MP-3A/TO-252

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Discrete Semiconductor Products

LTB

NCH SINGLE POWER MOSFET 600V 2A 6800MOHM MP-3A/TO-252

Technical Specifications

Parameters and characteristics for this part

Specification	RJK6002DPD-00#J2

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	165 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Rds On (Max) @ Id, Vgs	6.8 Ohm
Supplier Device Package	MP-3A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Nch Single Power Mosfet 600V 2A 6800Mohm Mp-3A/To-252

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Operating Temperature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	FET Type
Renesas Electronics Corporation RJK6002DPD-00#J2	MP-3A	6.8 Ohm	10 V	MOSFET (Metal Oxide)	165 pF	2 A	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	600 V	6.2 nC	Surface Mount	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

The RJK6002DPD is a Nch Single Power Mosfet 600V 2A 6800Mohm Mp-3A/To-252.

Technical documentation and resources