Sensors, Transducers
BPW34S
ActiveVishay General Semiconductor - Diodes Division
SENSOR PHOTODIODE 900NM 2DIP
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DocumentsDatasheet
Sensors, Transducers
BPW34S
ActiveVishay General Semiconductor - Diodes Division
SENSOR PHOTODIODE 900NM 2DIP
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | BPW34S |
|---|---|
| Active Area | 7.5 mm˛ |
| Current - Dark (Typ) | 2 nA |
| Diode Type | PIN |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 100 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 2-DIP |
| Spectral Range [Max] | 1100 nm |
| Spectral Range [Min] | 430 nm |
| Viewing Angle | 130 ° |
| Voltage - DC Reverse (Vr) (Max) [Max] | 60 V |
| Wavelength | 900 nm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.45 | |
| 45 | $ 0.92 | |||
| 135 | $ 0.68 | |||
| 540 | $ 0.62 | |||
| 1035 | $ 0.51 | |||
| 2025 | $ 0.49 | |||
| 5040 | $ 0.48 | |||
| 10035 | $ 0.47 | |||
Description
General part information
BPW34 Series
Photodiode 900nm 130° 2-DIP
Documents
Technical documentation and resources