Specification	BUD42DT4G

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 hFE
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	25 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	350 V

BUD42D Series

High Speed, High Gain NPN Bipolar Power Transistor

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Package / Case	Supplier Device Package	Transistor Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type
ON Semiconductor BUD42DG	150 °C	-65 °C	1 V	10 hFE	4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	NPN	25 W	100 µA	350 V	Surface Mount
ON Semiconductor BUD42D-001	150 °C	-65 °C	1 V	10 hFE	4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	NPN	25 W	100 µA	350 V	Surface Mount
ON Semiconductor BUD42DT4G	150 °C	-65 °C	1 V	10 hFE	4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	NPN	25 W	100 µA	350 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The NPN Bipolar Power Transistor is ideally suitable for light ballast applications.