Discrete Semiconductor Products

VS-80EPF06PBF

Obsolete

DIODE GEN PURP 600V 80A TO247AC

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 80A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-80EPF06PBF

Current - Average Rectified (Io)	80 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	190 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Package / Case	Mounting Type
Vishay General Semiconductor - Diodes Division VS-80EPF06PBF	200 mA 500 ns	190 ns	100 µA	150 °C	-40 °C	1.25 V	80 A	600 V	Standard	TO-247AC	TO-247-3	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 80A Through Hole TO-247AC

Technical documentation and resources