Discrete Semiconductor Products

KSP44TA

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BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 300 MA, 625 MW, TO-92, THROUGH HOLE

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 300 MA, 625 MW, TO-92, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	KSP44TA

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	750 mV
Voltage - Collector Emitter Breakdown (Max)	400 V

NPN Epitaxial Silicon Transistor

Part	Mounting Type	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Transistor Type
ON Semiconductor KSP44BU	Through Hole	150 °C	400 V	500 nA	50 hFE	750 mV	TO-226-3 TO-92-3	TO-92-3	300 mA	625 mW	NPN
ON Semiconductor KSP44TA	Through Hole	150 °C	400 V	500 nA	50 hFE	750 mV	TO-226-3 TO-92-3	TO-92-3	300 mA	625 mW	NPN
ON Semiconductor KSP44TF	Through Hole	150 °C	400 V	500 nA	50 hFE	750 mV	TO-226-3 TO-92-3	TO-92-3	300 mA	625 mW	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources