Discrete Semiconductor Products

HT17G A1G

Unknown

DIODE GEN PURP 800V 1A TS-1

Search across all available documentation for this part.

Discrete Semiconductor Products

Unknown

DIODE GEN PURP 800V 1A TS-1

Technical Specifications

Parameters and characteristics for this part

Specification	HT17G A1G

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	T-18, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	TS-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Package / Case	Capacitance @ Vr, F	Speed	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Taiwan Semiconductor Corporation HT17G A1G	Standard	800 V	Through Hole	TS-1	1 A	T-18 Axial	10 pF	200 mA 500 ns	75 ns	1.7 V	5 µA	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 800 V 1A Through Hole TS-1

Technical documentation and resources