Discrete Semiconductor Products
RGT8NS65DGC9
ActiveRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 4A, FRD BUILT-IN, TO-262, FIELD STOP TRENCH IGBT
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Discrete Semiconductor Products
RGT8NS65DGC9
ActiveRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 4A, FRD BUILT-IN, TO-262, FIELD STOP TRENCH IGBT
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Technical Specifications
Parameters and characteristics for this part
| Specification | RGT8NS65DGC9 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Pulsed (Icm) | 12 A |
| Gate Charge | 13.5 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power - Max [Max] | 65 W |
| Reverse Recovery Time (trr) | 40 ns |
| Supplier Device Package | TO-262 |
| Td (on/off) @ 25°C | 17 ns |
| Td (on/off) @ 25°C | 69 ns |
| Test Condition | 400 V, 15 V, 4 A, 50 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGT8NS65D(TO-262) Series
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Documents
Technical documentation and resources