Discrete Semiconductor Products

IXFA4N100Q

Active

MOSFET, 4A, 1KV, 150W, TO-263AA ROHS COMPLIANT: YES

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET, 4A, 1KV, 150W, TO-263AA ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IXFA4N100Q

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	1050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	TO-263AA (IXFA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)
Littelfuse/Commercial Vehicle Products IXFA4N100Q	150 W	4 A	-55 °C	150 °C	39 nC	10 V	Surface Mount	3 Ohm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1050 pF	20 V	4.5 V	N-Channel	MOSFET (Metal Oxide)	TO-263AA (IXFA)	1000 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1000 V 4A (Tc) 150W (Tc) Surface Mount TO-263AA (IXFA)

Technical documentation and resources

No documents available