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PowerDI5060-8
Discrete Semiconductor Products

DMT15H017LPS-13

Active
Diodes Inc

MOSFET ENHANCEMENT N-CHANNEL 150V 8-PIN POWERDI5060 T/R

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PowerDI5060-8
Discrete Semiconductor Products

DMT15H017LPS-13

Active
Diodes Inc

MOSFET ENHANCEMENT N-CHANNEL 150V 8-PIN POWERDI5060 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT15H017LPS-13
Current - Continuous Drain (Id) @ 25°C9.4 A
Current - Continuous Drain (Id) @ 25°C58 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]50 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds3369 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)1.3 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs17.5 mOhm
Supplier Device PackagePowerDI5060-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.60
10$ 1.31
100$ 1.02
500$ 0.86
1000$ 0.70
Digi-Reel® 1$ 1.60
10$ 1.31
100$ 1.02
500$ 0.86
1000$ 0.70
Tape & Reel (TR) 2500$ 0.64
5000$ 0.62

Description

General part information

DMT15H017LPS Series

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.

Documents

Technical documentation and resources