Discrete Semiconductor Products

NTD18N06L-1G

Obsolete

ON Semiconductor

SINGLE N-CHANNEL LOGIC LEVEL POWER MOSFET 60V, 18A, 65MΩ

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Discrete Semiconductor Products

NTD18N06L-1G

Obsolete

ON Semiconductor

SINGLE N-CHANNEL LOGIC LEVEL POWER MOSFET 60V, 18A, 65MΩ

Deep-Dive with AI

DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTD18N06L-1G

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	675 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	55 W, 2.1 W
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

NTD18N06L Series

Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Qualification	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Grade	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NTDV18N06LT4G	22 nC	15 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	65 mOhm	AEC-Q101	Surface Mount	N-Channel	5 V	675 pF	-55 °C	175 ░C	DPAK	MOSFET (Metal Oxide)	Automotive	18 A	2.1 W 55 W	60 V	2 V
ON Semiconductor NTD18N06L	22 nC	15 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	65 mOhm		Surface Mount	N-Channel	5 V	675 pF	-55 °C	175 ░C	DPAK	MOSFET (Metal Oxide)		18 A	2.1 W 55 W	60 V	2 V
ON Semiconductor NTD18N06L-1G	22 nC	15 V	IPAK TO-251-3 Short Leads TO-251AA	65 mOhm		Through Hole	N-Channel	5 V	675 pF	-55 °C	175 ░C	IPAK	MOSFET (Metal Oxide)		18 A	2.1 W 55 W	60 V	2 V
ON Semiconductor NTD18N06T4G		20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 mOhm		Surface Mount	N-Channel	10 V		-55 °C	175 ░C	DPAK	MOSFET (Metal Oxide)		18 A	2.1 W 55 W	60 V	4 V	710 pF	30 nC
ON Semiconductor NTD18N06		20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 mOhm		Surface Mount	N-Channel	10 V		-55 °C	175 ░C	DPAK	MOSFET (Metal Oxide)		18 A	2.1 W 55 W	60 V	4 V	710 pF	30 nC
ON Semiconductor NTD18N06LG	22 nC	15 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	65 mOhm		Surface Mount	N-Channel	5 V	675 pF	-55 °C	175 ░C	DPAK	MOSFET (Metal Oxide)		18 A	2.1 W 55 W	60 V	2 V
ON Semiconductor NTD18N06G		20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 mOhm		Surface Mount	N-Channel	10 V		-55 °C	175 ░C	DPAK	MOSFET (Metal Oxide)		18 A	2.1 W 55 W	60 V	4 V	710 pF	30 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTD18N06L Series

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

Documents

Technical documentation and resources