Discrete Semiconductor Products

SIA426DJ-T1-GE3

Obsolete

MOSFET N-CH 20V 4.5A PPAK SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 4.5A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA426DJ-T1-GE3

Current - Continuous Drain (Id) (Tc)	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	27 nC
Input Capacitance (Ciss) (Max)	1020 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max)	23.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

Part	Mounting Type	Vgs (Max)	Vgs(th) (Max)	Package / Case	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	FET Type
Vishay Dale SIA426DJ-T1-GE3	Surface Mount	12 V	1.5 V	PowerPAK® SC-70-6	PowerPAK® SC-70-6	10 V	2.5 V	27 nC	MOSFET (Metal Oxide)	3.5 W 19 W	1020 pF	20 V	23.6 mOhm	-55 °C	150 °C	4.5 A	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 20 V 4.5A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources