Discrete Semiconductor Products

BSR16,215

Active

TRANS PNP 60V 0.6A TO236AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

TRANS PNP 60V 0.6A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BSR16,215

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	200 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Mounting Type	Grade	Transistor Type	Package / Case	Frequency - Transition	Supplier Device Package	Qualification	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Operating Temperature
Freescale Semiconductor - NXP BSR16,215	0.01 µA	250 mW	Surface Mount	Automotive	PNP	SC-59 SOT-23-3 TO-236-3	200 MHz	TO-236AB	AEC-Q101	1.6 V	100	60 V	600 mA	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 250 mW Surface Mount TO-236AB

Technical documentation and resources