Specification	SSM6J213FE(TE85L,F

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	290 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs [Max]	103 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

SSM6J213 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -2.6 A, 0.103 Ω@4.5V, SOT-563(ES6)

Part	FET Type	Mounting Type	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max) [Max]	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage SSM6J213FE(TE85L,F	P-Channel	Surface Mount	150 °C	2.6 A	20 V	103 mOhm	8 V	ES6	500 mW	1 V	SOT-563 SOT-666	MOSFET (Metal Oxide)	1.5 V 4.5 V	290 pF	4.7 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -2.6 A, 0.103 Ω@4.5V, SOT-563(ES6)

Technical documentation and resources