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MCT03N06-TP
Discrete Semiconductor Products

BCP55-16-TP

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MCT03N06-TP
Discrete Semiconductor Products

BCP55-16-TP

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBCP55-16-TP
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]63 hFE
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]1.5 W
Supplier Device PackageSOT-223
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 2500$ 0.08

Description

General part information

BCP55 Series

Bipolar (BJT) Transistor NPN 60 V 1 A 100MHz 1.5 W Surface Mount SOT-223

Documents

Technical documentation and resources