Discrete Semiconductor Products
R6007END3TL1
NRNDRohm Semiconductor
600V 7A TO-252 (DPAK), LOW-NOISE POWER MOSFET
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Discrete Semiconductor Products
R6007END3TL1
NRNDRohm Semiconductor
600V 7A TO-252 (DPAK), LOW-NOISE POWER MOSFET
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Technical Specifications
Parameters and characteristics for this part
| Specification | R6007END3TL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 20 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 78 W |
| Rds On (Max) @ Id, Vgs | 620 mOhm |
| Supplier Device Package | TO-252 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6007END3 Series
Power MOSFET R6007END3 is suitable for switching power supply.
Documents
Technical documentation and resources