Discrete Semiconductor Products

SI01P10-TP

Active

MOSFET, P-CH, 100V, 1A, SOT-23 ROHS COMPLIANT: YES

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET, P-CH, 100V, 1A, SOT-23 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	SI01P10-TP

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	100 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	3.2 nC
Input Capacitance (Ciss) (Max) @ Vds	388 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	770 mW
Rds On (Max) @ Id, Vgs	800 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case
Micro Commercial Components SI01P10-TP	800 mOhm	3 V	770 mW	-55 °C	150 °C	SOT-23	MOSFET (Metal Oxide)	1 A	P-Channel	3.2 nC	100 V	20 V	388 pF	Surface Mount	SC-59 SOT-23-3 TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 100 V 1A (Tj) 770mW Surface Mount SOT-23

Technical documentation and resources