Discrete Semiconductor Products

2SC5865TLQ

NRND

Rohm Semiconductor

TRANS NPN 60V 1A TSMT3

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Discrete Semiconductor Products

NRND

Rohm Semiconductor

TRANS NPN 60V 1A TSMT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5865TLQ

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-96
Power - Max [Max]	500 mW
Supplier Device Package	TSMT3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Transistor Type	Power - Max [Max]	Operating Temperature	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
Rohm Semiconductor 2SC5865TLQ	NPN	500 mW	150 °C	250 MHz	60 V	Surface Mount	120	TSMT3	1 A	SC-96	1 µA	500 mV
Rohm Semiconductor 2SC5865TLR	NPN	500 mW	150 °C	250 MHz	60 V	Surface Mount	180 hFE	TSMT3	1 A	SC-96	1 µA	500 mV

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General part information

Bipolar (BJT) Transistor NPN 60 V 1 A 250MHz 500 mW Surface Mount TSMT3

Technical documentation and resources