Discrete Semiconductor Products

DJR0417

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REVERSE BATTERY PROTECTION MOSFE

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Discrete Semiconductor Products

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REVERSE BATTERY PROTECTION MOSFE

Technical Specifications

Parameters and characteristics for this part

Specification	DJR0417

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	48 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12.6 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Grade	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Technology	Mounting Type	Vgs (Max)	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)
Sanken Electric USA Inc. DJR0417	12.6 mOhm	17 A	Automotive	150 °C	-55 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	Surface Mount	20 V	AEC-Q101	4.5 V 10 V	2.5 V	40 V	TO-252	75 nC	P-Channel	48 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 17A (Tc) 48W (Tc) Surface Mount TO-252

Technical documentation and resources