IXTN400N15X4
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 400 A, 150 V, 0.00235 OHM, 10 V, 4.5 V
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IXTN400N15X4
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 400 A, 150 V, 0.00235 OHM, 10 V, 4.5 V
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXTN400N15X4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 400 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 430 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 14500 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) [Max] | 1070 W |
| Rds On (Max) @ Id, Vgs | 2.7 mOhm |
| Supplier Device Package | SOT-227B |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
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Description
General part information
IXTN400N15X4 Series
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.
Documents
Technical documentation and resources