Discrete Semiconductor Products

BAS116L2-TP

Obsolete

DIODE STD 85V 215MA DFN10062C

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Discrete Semiconductor Products

Obsolete

DIODE STD 85V 215MA DFN10062C

Technical Specifications

Parameters and characteristics for this part

Specification	BAS116L2-TP

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	215 mA
Current - Reverse Leakage @ Vr	5 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	2-UDFN
Reverse Recovery Time (trr)	3 çs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DFN1006-2C
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	85 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Technology	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Package / Case	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package	Speed	Speed
Micro Commercial Components BAS116L2-TP	Standard	Surface Mount	5 nA	85 V	150 °C	-65 C	2 pF	2-UDFN	215 mA	3 çs	1.25 V	DFN1006-2C	Standard Recovery >500ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 85 V 215mA Surface Mount DFN1006-2C

Technical documentation and resources