
Discrete Semiconductor Products
PDTC143XQC-QZ
ActiveNexperia USA Inc.
DIGITAL TRANSISTORS NPN RESISTOR-EQUIPPED TRANSISTORS; R1 = 4.7 KOHM, R2 = 10 KOHM
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Discrete Semiconductor Products
PDTC143XQC-QZ
ActiveNexperia USA Inc.
DIGITAL TRANSISTORS NPN RESISTOR-EQUIPPED TRANSISTORS; R1 = 4.7 KOHM, R2 = 10 KOHM
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Technical Specifications
Parameters and characteristics for this part
| Specification | PDTC143XQC-QZ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 50 |
| Frequency - Transition | 230 MHz |
| Grade | Automotive |
| Mounting Type | Wettable Flank, Surface Mount |
| Package / Case | 3-XDFN Exposed Pad |
| Power - Max [Max] | 360 mW |
| Qualification | AEC-Q101 |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Supplier Device Package | DFN1412D-3 |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
PDTC143 Series
50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ
| Part | Power - Max [Max] | Transistor Type | Current - Collector (Ic) (Max) [Max] | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Emitter Base (R2) | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Frequency - Transition | Mounting Type | Resistor - Base (R1) | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | |||||||||||||||
Nexperia USA Inc. | 360 mW | NPN - Pre-Biased | 100 mA | 3-XDFN Exposed Pad | 30 | 4.7 kOhms | 50 V | 100 mV | 100 nA | DFN1412D-3 | 230 MHz | Surface Mount Wettable Flank | 4.7 kOhms | ||
Nexperia USA Inc. | 250 mW | NPN - Pre-Biased | 100 mA | 3-XFDFN | 30 | 4.7 kOhms | 50 V | 150 mV | 1 µA | DFN1006B-3 | 230 MHz | Surface Mount | 4.7 kOhms | Automotive | AEC-Q100 |
Nexperia USA Inc. | 280 mW | NPN - Pre-Biased | 100 mA | 3-XDFN Exposed Pad | 100 | 47 kOhms | 50 V | 100 mV | 1 µA | DFN1010D-3 | 230 MHz | Surface Mount | 4.7 kOhms | Automotive | AEC-Q101 |
Nexperia USA Inc. | |||||||||||||||
Nexperia USA Inc. | 200 mW | NPN - Pre-Biased | 100 mA | SC-70 SOT-323 | 200 | 50 V | 100 mV | 1 µA | SOT-323 | Surface Mount | 4.7 kOhms | Automotive | AEC-Q100 | ||
Nexperia USA Inc. | 250 mW | NPN - Pre-Biased | 100 mA | SC-59 SOT-23-3 TO-236-3 | 100 | 47 kOhms | 50 V | 100 mV | 1 µA | TO-236AB | 230 MHz | Surface Mount | 4.7 kOhms | Automotive | AEC-Q100 |
Nexperia USA Inc. | 360 mW | NPN - Pre-Biased | 100 mA | 3-XDFN Exposed Pad | 100 | 47 kOhms | 50 V | 100 mV | 100 nA | DFN1412D-3 | 230 MHz | Surface Mount Wettable Flank | 4.7 kOhms | ||
Nexperia USA Inc. | 250 mW | NPN - Pre-Biased | 100 mA | SC-59 SOT-23-3 TO-236-3 | 30 | 4.7 kOhms | 50 V | 150 mV | 1 µA | TO-236AB | Surface Mount | 4.7 kOhms | |||
Nexperia USA Inc. | 360 mW | NPN - Pre-Biased | 100 mA | 3-XDFN Exposed Pad | 50 | 10 kOhms | 50 V | 100 mV | 100 nA | DFN1412D-3 | 230 MHz | Surface Mount Wettable Flank | 4.7 kOhms | Automotive | AEC-Q101 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PDTC143 Series
100 mA NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Documents
Technical documentation and resources