Discrete Semiconductor Products

SICPT40120Y-BP

Active

DIODE SIC 1.2KV 40A TO247AD

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE SIC 1.2KV 40A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	SICPT40120Y-BP

Capacitance @ Vr, F	2938 pF
Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247AD
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Average Rectified (Io)	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr
Micro Commercial Components SICPT40120DY-BP	1.2 kV	SiC (Silicon Carbide) Schottky	No Recovery Time	1.55 V	0 ns	1 Pair Common Cathode	20 A	Through Hole	TO-247AB	175 ░C	-55 C	TO-247-3
Micro Commercial Components SICPT40120Y-BP	1.2 kV	SiC (Silicon Carbide) Schottky	No Recovery Time	1.6 V	0 ns			Through Hole	TO-247AD	175 ░C	-55 C	TO-247-2	40 A	2938 pF	20 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 40A Through Hole TO-247AD

Technical documentation and resources