Discrete Semiconductor Products

UG12JTHE3/45

Obsolete

DIODE GEN PURP 600V 12A TO220AC

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 12A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	UG12JTHE3/45

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	30 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	TO-220-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.75 V

Part	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Reverse Recovery Time (trr)	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Package / Case	Technology	Speed	Qualification	Grade
Vishay General Semiconductor - Diodes Division UG12JT-E3/45	1.75 V	Through Hole	50 ns	TO-220AC	30 µA	12 A	600 V	150 °C	TO-220-2	Standard	200 mA 500 ns
Vishay General Semiconductor - Diodes Division UG12JTHE3/45	1.75 V	Through Hole	50 ns	TO-220AC	30 µA	12 A	600 V	150 °C	TO-220-2	Standard	200 mA 500 ns	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division UG12HT-E3/45	1.75 V	Through Hole	50 ns	TO-220AC	30 µA	12 A	500 V	150 °C	TO-220-2	Standard	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 12A Through Hole TO-220AC

Technical documentation and resources