Discrete Semiconductor Products

JAN1N6623U

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DIODE GEN PURP 800V 1A D-5A

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Discrete Semiconductor Products

Active

DIODE GEN PURP 800V 1A D-5A

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N6623U

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	500 nA
Grade	Military
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Qualification	MIL-PRF-19500/585
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Supplier Device Package	D-5A
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.55 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Supplier Device Package	Qualification	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Technology	Grade
Microsemi Corporation JAN1N6623U	800 V	200 mA 500 ns	150 °C	-65 C	1 A	D-5A	MIL-PRF-19500/585	500 nA	30 ns	1.55 V	Surface Mount	Standard	Military

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General part information

Diode 800 V 1A Surface Mount D-5A

Technical documentation and resources