Discrete Semiconductor Products

US1K-E3/5AT

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DIODE GEN PURP 800V 1A DO214AC

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Discrete Semiconductor Products

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DIODE GEN PURP 800V 1A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	US1K-E3/5AT

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Qualification	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed	Capacitance @ Vr, F	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Reverse Recovery Time (trr)
Vishay General Semiconductor - Diodes Division US1KHE3_A/I	150 °C	-55 °C	Automotive	AEC-Q101	Standard	800 V	Surface Mount	DO-214AC SMA	1.7 V	200 mA 500 ns	10 pF	1 A	10 µA	DO-214AC (SMA)	75 ns
Vishay General Semiconductor - Diodes Division US1K-E3/5AT	150 °C	-55 °C			Standard	800 V	Surface Mount	DO-214AC SMA	1.7 V	200 mA 500 ns	10 pF	1 A	10 µA	DO-214AC (SMA)	75 ns
Vishay General Semiconductor - Diodes Division US1KHE3_A/H	150 °C	-55 °C	Automotive	AEC-Q101	Standard	800 V	Surface Mount	DO-214AC SMA	1.7 V	200 mA 500 ns	10 pF	1 A	10 µA	DO-214AC (SMA)	75 ns
Vishay General Semiconductor - Diodes Division US1K-M3/61T	150 °C	-55 °C			Standard	800 V	Surface Mount	DO-214AC SMA	1.7 V	200 mA 500 ns	10 pF	1 A	10 çA	DO-214AC (SMA)	75 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 1A Surface Mount DO-214AC (SMA)

Technical documentation and resources